New Journal of Physics (Jan 2015)

Negative differential conductance in two-dimensional C-functionalized boronitrene

  • J T Obodo,
  • K O Obodo,
  • U Schwingenschlögl

DOI
https://doi.org/10.1088/1367-2630/17/9/093012
Journal volume & issue
Vol. 17, no. 9
p. 093012

Abstract

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It recently has been demonstrated that the large band gap of boronitrene can be significantly reduced by C functionalization. We show that specific defect configurations even can result in metallicity, raising interest in the material for electronic applications. We thus study the transport properties of C-functionalized boronitrene using the non-equilibrium Green's function formalism. We investigate various zigzag and armchair defect configurations, spanning wide band gap semiconducting to metallic states. Unusual I – V characteristics are found and explained in terms of the energy and bias-dependent transmission coefficient and wavefunction. In particular, we demonstrate negative differential conductance with high peak-to-valley ratios, depending on the details of the substitutional doping, and identify the finite bias effects that are responsible for this behavior.

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