Low Interface Trapped Charge Density for AlO/&#x03B2;-GaO (001) Metal-Insulator-Semiconductor Capacitor<sub/><sub/><sub/><sub/>

Abstract

In this letter, high-performance Al2O3/ $\beta$ -Ga2O3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated. The capacitance-voltage (C–V) curves of the Al2O3/ $\beta$ -Ga2O3 (001) MIS capacitor remain stable under different measurement frequencies. The leakage current density is lower than $2.0 \times 10^{-8}$ A/cm2 when the gate voltage is in the range of −5~13 V. The fixed charge and trapped charge densities in Al2O3 film are $4.4 \times 10^{12}$ and $6.0 \times 10^{11}$ cm−2, respectively. Average and minimum interface trapped charge density ( ${\mathrm {D}}_{it}$ ) for Al2O3/ $\beta$ -Ga2O3 (001) interface has been extracted to be as low as $3.3 \times 10^{11}$ and $2.3 \times 10^{11}$ cm−2 eV−1 via the Terman method, respectively. The low ${\mathrm {D}}_{it}$ is probably attributed to the modification of vacancy defects and the introduction of hydroxyl groups at the Al2O3/ $\beta$ -Ga2O3 (001) interface after piranha solution pretreatment for $\beta$ -Ga2O3.

Keywords

• β-Ga₂O₃
• Al₂O₃
• MIS capacitor
• interface trapped charge density