IEEE Journal of the Electron Devices Society

2168-6734 (Online)

Tick icon: journal was accepted after March 2014

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Publisher: IEEE

Society/Institution: IEEE Electron Devices Society

Country of publisher: United States

Platform/Host/Aggregator: IEEE Xplore Digital Library

Date added to DOAJ: 23 Oct 2014

Record Last Updated: 11 Oct 2018

LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering

Publisher's keywords: field effect transistors, Indium gallium arsenide, logic gates, Silicon, tunneling

Language of fulltext: English

Full-text formats available: PDF, HTML

PUBLICATION CHARGES

Article Processing Charges (APCs): Yes. 1750USD

Submission Charges: No.

Waiver policy for charges? No.

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Aims and scope

Instructions for authors

Time From Submission to Publication: 17 weeks

OPEN ACCESS & LICENSING

Type of License: Publisher's own license

License terms

Open Access Statement

Year Open Access Content Began: 2013

Does the author retain unrestricted copyright? No

Does the author retain publishing rights? No

BEST PRACTICE POLICIES

Permanent article identifier: DOI

Checks for plagiarism: Yes

Content digitally archived in: Portico

Article-level metrics: Yes

Deposit policy registered in: Sherpa/Romeo

Electronically embedded licenses? Yes

Tables of Contents

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