Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise

Abstract

In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.

Keywords

• 3-DNAND Flash memories
• variability
• random telegraph noise
• discrete traps