Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

Hehe Gong; Zhengpeng Wang; Xinxin Yu; Fangfang Ren; Yi Yang; Yuanjie Lv; Zhihong Feng; Shulin Gu; Rong Zhang; Youdou Zheng; Jiandong Ye

doi:10.1109/JEDS.2021.3130305

IEEE Journal of the Electron Devices Society (Jan 2021)

Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

Hehe Gong,
Zhengpeng Wang,
Xinxin Yu,
Fangfang Ren,
Yi Yang,
Yuanjie Lv,
Zhihong Feng,
Shulin Gu,
Rong Zhang,
Youdou Zheng,
Jiandong Ye

Affiliations

Hehe Gong: ORCiD; School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Zhengpeng Wang: National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, China
Xinxin Yu: ORCiD; School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Fangfang Ren: School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Yi Yang: School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Yuanjie Lv: ORCiD; National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, China
Zhihong Feng: ORCiD; National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, China
Shulin Gu: School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Rong Zhang: School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Youdou Zheng: School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
Jiandong Ye: ORCiD; School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JEDS.2021.3130305
Journal volume & issue: Vol. 9
pp. 1166 – 1171

Abstract

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In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) integrated with SiNx/Al2O3 double-layered insulating field plate (FP) structures have been demonstrated. With the additional post-annealing, the resultant diode exhibits a decreased differential specific on-resistance ( $\text{R}_{\mathrm{ on,sp}}$ ) of 5.4 $\text{m}\boldsymbol{\Omega } \cdot $ cm2 and an enhanced breakdown voltage (BV) of 1036 V. The improved performance is attributed by the combination of the FP-suppressed crowding electric field at the device edge and the reduced trap density at the NiO/Ga2O3 interface. In particular, the near-unity ideality factor has been achieved for this p-n HJD at an elevated temperature of 275 °C, indicating that the diffusion current is dominated. The high-temperature operation capability is owing to the quality improvement of NiO/Ga2O3 interface, where the Shockley-Read-Hall (SRH) recombination mediated by deep-level defects within the depletion region is thus suppressed.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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