Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model

Harshit Agarwal; Chetan Gupta; Pragya Kushwaha; Chandan Yadav; Juan P. Duarte; Sourabh Khandelwal; Chenming Hu; Yogesh S. Chauhan

doi:10.1109/JEDS.2015.2415584

IEEE Journal of the Electron Devices Society (Jan 2015)

Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model

Harshit Agarwal,
Chetan Gupta,
Pragya Kushwaha,
Chandan Yadav,
Juan P. Duarte,
Sourabh Khandelwal,
Chenming Hu,
Yogesh S. Chauhan

Affiliations

Harshit Agarwal: Nanolab, Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Chetan Gupta: Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, CA, USA
Pragya Kushwaha: Nanolab, Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Chandan Yadav: Nanolab, Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Juan P. Duarte: Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, CA, USA
Sourabh Khandelwal: Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, CA, USA
Chenming Hu: Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, CA, USA
Yogesh S. Chauhan: Nanolab, Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India

DOI: https://doi.org/10.1109/JEDS.2015.2415584
Journal volume & issue: Vol. 3, no. 3
pp. 240 – 243

Abstract

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In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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