1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination

Ru Xu; Peng Chen; Menghan Liu; Jing Zhou; Yunfei Yang; Yimeng Li; Cheng Ge; Haocheng Peng; Bin Liu; Dunjun Chen; Zili Xie; Rong Zhang; Youdou Zheng

doi:10.1109/JEDS.2020.2980759

IEEE Journal of the Electron Devices Society (Jan 2020)

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse <italic>p-n</italic> Junction Termination

Ru Xu,
Peng Chen,
Menghan Liu,
Jing Zhou,
Yunfei Yang,
Yimeng Li,
Cheng Ge,
Haocheng Peng,
Bin Liu,
Dunjun Chen,
Zili Xie,
Rong Zhang,
Youdou Zheng

Affiliations

Ru Xu: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Peng Chen: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Menghan Liu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Jing Zhou: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Yunfei Yang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Yimeng Li: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Cheng Ge: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Haocheng Peng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Bin Liu: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Dunjun Chen: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Zili Xie: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Youdou Zheng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JEDS.2020.2980759
Journal volume & issue: Vol. 8
pp. 316 – 320

Abstract

Read online

In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN p-n junction termination (RPN). The SBD has a current output of 1 kA/cm2 at $V_{F}=2.5$ V, a low $V_{on}$ of 0.66 V ± 0.017 V, a low $R_{on,sp}$ of 1.4 $\text{m}\Omega \cdot $ cm2, current ON/OFF ratio of over $10^{9}$ (−3 V~3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm2. It is shown that the presence of the RPN with a suitable anode recess depth can generate an electric field (EF) opposite to the built-in EF at the center of the second top p-n junction, which can decrease the EF peak intensity and make the electric field more uniformly distributed inside the device. Finally, the leakage current of the SBD is inhibited and the breakdown voltage is increased.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

About the journal

Abstract

Keywords