A Time-of-Flight Range Image Sensor With Background Canceling Lock-in Pixels Based on Lateral Electric Field Charge Modulation

Abstract

This paper presents a CMOS time-of-flight (ToF) range image sensor using high-speed lock-in pixels with background light canceling capability. The proposed lock-in pixel uses MOS gate-induced lateral electric field control of depleted potential of pinned photodiode for implementing a multiple-tap charge modulator while achieving a high-speed charge transfer for high-time resolution. A TOF image sensor with 320 x 240 effective pixels is implemented using a 0.11-μm CMOS image sensor process. The TOF sensor has a range resolution of less than 12 mm without background light and 20 mm under background line for the range from 0.8 to 1.8 m and integration time of 50 ms. The effectiveness of in-pixel background light canceling with a three-tap output pixel is demonstrated.

Keywords

• CMOS image sensor
• depth image,
• pinned pho-todiode
• Time-of-Flight (ToF)
• lateral electric field charge modu-lator (LEFM)