GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution

Abstract

A discrete GaN power transistor’s substrate is typically connected to its source electrode. However, on the GaN-on-Si power IC platform, the high-side transistor (HS-transistor) and low-side transistor (LS-transistor) share a common substrate that cannot be simultaneously connected to both source electrodes of the two transistors. Thus, the termination of the common substrate remains an undecided issue. In this work, comprehensive TCAD simulations are exploited to reveal the influences of various substrate termination schemes. It is found the common substrate inevitably leads to severe degradation in the dynamic ${R} _{\mathrm{ ON}}$ due to back-gating effects. The mechanisms for the degradations vary with the substrate termination scheme, and will be discussed in detail. To address these issues, we propose a new GaN power IC platform on an engineered bulk silicon substrate, and study the new platform with TCAD simulations. The proposed platform provides a local electrical substrate (a p+ island) for each GaN power transistor. The source electrode of each GaN transistor is connected to its local electrical substrate, while all devices share a common mechanical substrate. The junctions between the local substrates and the underlying n-layer provide an effective isolation between GaN transistors. The back-gating effects are completely suppressed for the GaN integrated bridge circuit.

Keywords

• GaN-on-Si
• GaN power IC
• high-side
• low-side
• back-gating effect
• dynamic RON