Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers

Abstract

Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental results, demonstrating the retention of steeper boron profiles after oxidation. Incorporation of the oxygen insertion layers into a CMOS process increases on-current and reduces threshold variability and mismatch.

Keywords

• Semiconductor device modeling
• CMOS
• diffusion
• oxidation
• interstitials