Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO_xN_y Gate Stack

Abstract

In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL). With more than 1 nm IL deposition to passivate the InGaAs surface, excellent sub-threshold characteristics (SSmin = 68 mV/dec) were achieved through the proposed gate stack technology. We performed positive-bias-temperature-instability (PBTI) measure -ments in order to ensure a reliable gate operation. The proposed bi-layer III-V gate stack achieved the excellent value of maximum gate overdrive voltage (VOV, max) of 0.49 V with CET = 1.04 nm. The proposed gate stack has a great potential for III-V MOSFET technology to low power logic applications.

Keywords

• Indium gallium arsenide (InGaAs)
• III-V MOSFET
• high-k gate dielectric
• hafnium oxynitride (HfOxNy)
• PBTI reliability