IEEE Journal of the Electron Devices Society (Jan 2017)

High Mobility In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

  • S. Yoshida,
  • H. C. Lin,
  • A. Vais,
  • A. Alian,
  • J. Franco,
  • S. El Kazzi,
  • Y. Mols,
  • Y. Miyanami,
  • M. Nakazawa,
  • N. Collaert,
  • H. Watanabe,
  • A. Thean

DOI
https://doi.org/10.1109/JEDS.2017.2741518
Journal volume & issue
Vol. 5, no. 6
pp. 480 – 484

Abstract

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We have validated that the electrical performances of the In0.53Ga0.47As MOSFETs such as sub-threshold slope (SS) and electron mobility were dependent on interfacial reactions in the metal/highk/InGaAs gate stacks which could be controlled remotely by choice of the metal electrodes. We demonstrated In0.53Ga0.47As MOSFETs with high mobility (peak mobility ~1300 cm2/Vs) and superior SS performance (SS 76.4 mV/dec) at the scaled CET region owing to the remote reduction of the native III-V oxide by the TiN electrodes.

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