IEEE Journal of the Electron Devices Society (Jan 2019)

A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

  • Chenhe Liu,
  • Qinghua Ren,
  • Zhixi Chen,
  • Lantian Zhao,
  • Chang Liu,
  • Qiang Liu,
  • Wenjie Yu,
  • Xinke Liu,
  • Qing-Tai Zhao

DOI
https://doi.org/10.1109/JEDS.2019.2947695
Journal volume & issue
Vol. 7
pp. 1114 – 1118

Abstract

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We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current ( $\text{I}_{\mathrm{ on}}$ )/off-current ( $\text{I}_{\mathrm{ off}}$ ) ratio reaches very high value of $\sim 10^{8}$ at $\text{V}_{\mathrm{ ds}}= - 0.5$ V with a smaller tunneling junction width at the drain. The innovative T-shape design allows integration of both TFET and metal-oxide semiconductor field-effect transistors (MOSFET) operation modes in one structure. Both TFET and MOSFET operation modes are experimentally demonstrated in this device structure, which provide the implementation of the selector function with the single device.

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