Third Generation PRESiCE™ Technology for Manufacturing SiC Power Devices in a 6-Inch Commercial Foundry

Abstract

A third-generation PRESiCE™ technology has been qualified for manufacturing SiC power devices in a commercial foundry using 6 inch wafers. JBS diodes, power MOSFETs, and JBSFETs with 1.2 kV ratings were fabricated using this technology with good yields. Conventional device structures similar to commercially available products were used in this work to perform the process qualification. Extensive measurements on devices from three process qualification lots demonstrate excellent parametric distributions within a wafer, between wafers within a lot, and between wafers from the three lots. The electrical characteristics of the JBS diodes, power MOSFETs and JBSFETs manufactured with PRESiCE™ are similar to those of commercial products.

Keywords

• Silicon carbide
• 4H-SiC
• MOSFET
• JBSFET
• JBS diode
• wafer maps