The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Ya-Hsiang Tai; Yi-Cheng Yuan; Cheng-Che Tu; Pin-Chun Wang

doi:10.1109/JEDS.2022.3164082

IEEE Journal of the Electron Devices Society (Jan 2022)

The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Ya-Hsiang Tai,
Yi-Cheng Yuan,
Cheng-Che Tu,
Pin-Chun Wang

Affiliations

Ya-Hsiang Tai: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Yi-Cheng Yuan: ORCiD; Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Cheng-Che Tu: ORCiD; Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Pin-Chun Wang: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

DOI: https://doi.org/10.1109/JEDS.2022.3164082
Journal volume & issue: Vol. 10
pp. 309 – 312

Abstract

Read online

Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

About the journal

Abstract

Keywords