Performance Projections for a Reconfigurable Tunnel NanoFET

Abstract

Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from pto n-type and from low power (LP) to high performance (HP) operation. In LP mode, a subthreshold swing S below 60 mV/dec is predicted for a current density per gate width up to 3 nA/μm. By changing the polarities of the program gates to HP mode the current density can be increased to more than 110 μA/μm. Thus, LP/HP reconfigurability liberates the transistor from the necessity to deliver low S up to very high current densities.

Keywords

• Tunnel field-effect transistor
• reconfigurable transistor
• sub-threshold swing
• low power
• carbon nanotube