High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

Abstract

N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm-2. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6 × 8 μm2 shows a dc gain of 55 at a collector current of Ic = 4 mA, with high collector-emitter breakdown voltage of ~17 V. The high-frequency response with cutoff frequency (fT) of 23 GHz and maximum available frequency (fmax) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications.

Keywords

• III-V/Si integration
• bipolar transistors
• semiconductor growth