GaN-Based GAA Vertical CMOS Inverter

Xinke Liu; Jiaying Yang; Jian Li; Feng Lin; Bo Li; Ziyue Zhang; Wei He; Mark Huang

doi:10.1109/JEDS.2022.3149932

IEEE Journal of the Electron Devices Society (Jan 2022)

GaN-Based GAA Vertical CMOS Inverter

Xinke Liu,
Jiaying Yang,
Jian Li,
Feng Lin,
Bo Li,
Ziyue Zhang,
Wei He,
Mark Huang

Affiliations

Xinke Liu: ORCiD; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China
Jiaying Yang: College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China
Jian Li: ORCiD; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China
Feng Lin: College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China
Bo Li: College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China
Ziyue Zhang: ORCiD; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China
Wei He: ORCiD; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China
Mark Huang: College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, Guangdong Provincial Key Laboratory of Deep Earth Science and Geothermal Energy Exploitation and Utilization, Shenzhen University, Shenzhen, China

DOI: https://doi.org/10.1109/JEDS.2022.3149932
Journal volume & issue: Vol. 10
pp. 224 – 228

Abstract

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In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the simulated physical models and associated model parameters have been well calibrated with the reported experimental results of GaN n-channel NWFET and the simulated typical electrical parameters match the measured data. According to the simulation results, the GaN GAA vertical nanowire CMOS inverter exhibits rail-to-rail operation, low static power dissipation, large noise margins, high thermal stability and good scalability.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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