An Analytical Model for the Gate C&#x2013;V Characteristics of UTB III&#x2014;V-on-Insulator MIS Structure

Muhammad Mainul Islam; Md. Nur Kutubul Alam; Md. Shamim Sarker; Md. Rafiqul Islam; Anisul Haque

doi:10.1109/JEDS.2017.2725340

IEEE Journal of the Electron Devices Society (Jan 2017)

An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure

Muhammad Mainul Islam,
Md. Nur Kutubul Alam,
Md. Shamim Sarker,
Md. Rafiqul Islam,
Anisul Haque

Affiliations

Muhammad Mainul Islam: ORCiD; Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, Bangladesh
Md. Nur Kutubul Alam: ORCiD; Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, Bangladesh
Md. Shamim Sarker: Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, Bangladesh
Md. Rafiqul Islam: Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna, Bangladesh
Anisul Haque: ORCiD; Department of Electrical and Electronic Engineering, East West University, Dhaka, Bangladesh

DOI: https://doi.org/10.1109/JEDS.2017.2725340
Journal volume & issue: Vol. 5, no. 5
pp. 335 – 339

Abstract

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We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel materials.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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