ZnON MIS Thin-Film Diodes

Abstract

Zinc oxynitride metal-insulator-semiconductor diodes are fabricated and characterized. Although these devices display excellent rectification, their temperature-dependent current-voltage characteristics are not explicable using analysis methodologies currently available in the literature. Therefore, we employ a simple curve fitting strategy in order to elucidate measured trends. It is found that the forward current trends are describable using three parameters, i.e., reverse saturation current, ideality factor, and series resistance, whereas the reverse current temperature dependence only requires one parameter, i.e., shunt resistance. All four of these model parameters are found to be strongly temperature dependent.

Keywords

• Metal oxide semiconductor
• zinc oxynitride
• MIS diode
• thin film device