A <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

Abstract

We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has an extremely low off-state leakage current, a practical driving capability, and tolerance against high temperatures. CAAC-IGZO FETs enable low-power integrated circuits, such as logic and memory in high-temperature environments. Performance estimation of a memory cell using the CAAC-IGZO FET with a gate length of 21 nm revealed that a write time of less than 1 ns and a data retention time of more than 1 h would be possible at 85 °C.

Keywords

• C-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO)%22%2C%22default_operator%22%3A%22AND%22%7D%7D%7D"> <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">C</italic>-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO)
• leakage current
• nonvolatile memory
• random access memory