Exciton ionization in multilayer transition-metal dichalcogenides

Abstract

Photodetectors and solar cells based on materials with strongly bound excitons rely crucially on field-assisted exciton ionization. We study the ionization process in multilayer transition-metal dichalcogenides (TMDs) within the Mott-Wannier model incorporating fully the pronounced anisotropy of these materials. Using complex scaling, we show that the field-dependence of the ionization process is strongly dependent on orientation. Also, we find that direct and indirect excitons behave qualitatively differently as a result of opposite effective anisotropy of these states. Based on first-principles material parameters, an analysis of several important TMDs reveals WSe _2 and MoSe _2 to be superior for applications relying on ionization of direct and indirect excitons, respectively.

Keywords

• transition-metal dichalcogenides
• exciton ionization
• mott-wannier excitons