IEEE Journal of the Electron Devices Society (Jan 2018)

Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives

  • Jin Onuki,
  • Kunihiro Tamahashi,
  • Takashi Inami,
  • Takatoshi Nagano,
  • Yasushi Sasajima,
  • Shuji Ikeda

DOI
https://doi.org/10.1109/JEDS.2018.2808494
Journal volume & issue
Vol. 6
pp. 506 – 511

Abstract

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Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires.

Keywords