High-Performance Amorphous Zinc&#x2013;Tin&#x2013;Oxide Thin-Film Transistors With Low Tin Concentration

Shufeng Weng; Rongsheng Chen; Wei Zhong; Sunbin Deng; Guijun Li; Fion Sze Yan Yeung; Linfeng Lan; Zhijian Chen; Hoi-Sing Kwok

doi:10.1109/JEDS.2019.2919424

IEEE Journal of the Electron Devices Society (Jan 2019)

High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration

Shufeng Weng,
Rongsheng Chen,
Wei Zhong,
Sunbin Deng,
Guijun Li,
Fion Sze Yan Yeung,
Linfeng Lan,
Zhijian Chen,
Hoi-Sing Kwok

Affiliations

Shufeng Weng: School of Material Science and Engineering, South China University of Technology, Guangzhou, China
Rongsheng Chen: ORCiD; School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
Wei Zhong: ORCiD; School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
Sunbin Deng: ORCiD; Department of Electronic and Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong Kong
Guijun Li: College of Electronic Science and Technology, Shenzhen University, Shenzhen, China
Fion Sze Yan Yeung: ORCiD; Department of Electronic and Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong Kong
Linfeng Lan: ORCiD; School of Material Science and Engineering, South China University of Technology, Guangzhou, China
Zhijian Chen: School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
Hoi-Sing Kwok: Department of Electronic and Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong Kong

DOI: https://doi.org/10.1109/JEDS.2019.2919424
Journal volume & issue: Vol. 7
pp. 632 – 637

Abstract

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In this paper, we present thin-film transistors (TFTs) with a zinc–tin–oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49% Sn, the electrical characteristics of TFTs can be obviously improved. After annealing at 440 °C, the optimal TFTs displayed a field-effect mobility of 8.71 cm2/ $\text{V}\cdot \text{s}$ , a high $\text{I}_{\mathrm{ on/off}}$ ratio of over $10^{8}$ , a subthreshold swing of 0.17 V/decade, and a turn-on voltage of −0.4 V, even with an Sn concentration of only 11.95%. Meanwhile, the shift of turn-on voltage under negative gate bias stress was only −0.4 V.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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