IEEE Journal of the Electron Devices Society (Jan 2022)

Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate

  • Qiang Ma,
  • Shiyo Urano,
  • Atsushi Tanaka,
  • Yuji Ando,
  • Akio Wakejima

DOI
https://doi.org/10.1109/JEDS.2022.3163379
Journal volume & issue
Vol. 10
pp. 297 – 300

Abstract

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This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (Vds) of 30 V, which was confirmed with combination of a top-side view using a CMOS sensor camera and a back-side view using a silicon-intensified CCD. As Vds was increased to 48 V, color change from low-intensity red to high-intensity white was accompanied with shift of the location from the gate to the drain edge. The changes in the EL are attributed to a shift of the high electric field from the gate to the drain electrode and a concentration of electric field near the drain edge.

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