Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Junkang Li; Zhuo Chen; Yiming Qu; Rui Zhang

doi:10.1109/JEDS.2020.2981627

IEEE Journal of the Electron Devices Society (Jan 2020)

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Junkang Li,
Zhuo Chen,
Yiming Qu,
Rui Zhang

Affiliations

Junkang Li: ORCiD; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Zhuo Chen: ORCiD; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Yiming Qu: ORCiD; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Rui Zhang: ORCiD; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

DOI: https://doi.org/10.1109/JEDS.2020.2981627
Journal volume & issue: Vol. 8
pp. 350 – 357

Abstract

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This paper proposes and develops a new technique based on low temperature conductance method to quantitatively evaluate the trap densities around NiGe/Ge Schottky junction interface and their time constants. It is found that the Schottky barrier height (SBH) in the NiGe/Ge junction is related with these junction traps. Additionally, the traps around junction interface could strongly affect the electrical properties of Ge MOSFETs, especially the OFF-state currents.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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