UTBB-Based Single Transistor Image Sensor of Submicron Pixel Using Back Gate Modulation

Liqiao Liu; Xiaoyan Liu; Gang Du

doi:10.1109/JEDS.2019.2937916

IEEE Journal of the Electron Devices Society (Jan 2019)

UTBB-Based Single Transistor Image Sensor of Submicron Pixel Using Back Gate Modulation

Liqiao Liu,
Xiaoyan Liu,
Gang Du

Affiliations

Liqiao Liu: ORCiD; Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, China
Xiaoyan Liu: Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, China
Gang Du: ORCiD; Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, China

DOI: https://doi.org/10.1109/JEDS.2019.2937916
Journal volume & issue: Vol. 7
pp. 919 – 924

Abstract

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Image sensor has developed for decades. Now, submicron photo sensor device with high performance is required. In this work, a UTBB (ultra-thin body and box) based single transistor image sensor has been investigated. The light collection and signal readout are accomplished by a single transistor, so the pixel of the UTBB image sensor can shrink down to the submicron. The main parameters impacting the performance of the UTBB image sensor such as back voltage, the thickness of the BOX, well doping concentration and well depth are investigated. Besides, the UTBB image sensor can achieve multi-resolution to adapt to different requirements. The performance of the UTBB image sensor is evaluated by TCAD simulations.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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