High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Zeyang Ren; Wanjiao Chen; Jinfeng Zhang; Jincheng Zhang; Chunfu Zhang; Guansheng Yuan; Kai Su; Zhiyu Lin; Yue Hao

doi:10.1109/JEDS.2018.2880005

IEEE Journal of the Electron Devices Society (Jan 2019)

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Zeyang Ren,
Wanjiao Chen,
Jinfeng Zhang,
Jincheng Zhang,
Chunfu Zhang,
Guansheng Yuan,
Kai Su,
Zhiyu Lin,
Yue Hao

Affiliations

Zeyang Ren: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Wanjiao Chen: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Jinfeng Zhang: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Jincheng Zhang: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Chunfu Zhang: ORCiD; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Guansheng Yuan: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Kai Su: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Zhiyu Lin: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Yue Hao: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China

DOI: https://doi.org/10.1109/JEDS.2018.2880005
Journal volume & issue: Vol. 7
pp. 82 – 87

Abstract

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High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at VGS = VDS = -4.5 V and an on-resistance of 65.39 Ω·mm. The transconductance keeps increasing when VGS shifts from VTH toward more negative direction, and reaches the record high value of 20 mS/mm at VGS of -4.5 V, which benefitted from the almost constant mobility of the holes in the gate voltage range of -4 V <; VGS <; -2 V. The critical device process to realize these low on-resistance normally-off MOSFETs consists of 2-min UV ozone treatment of the H-diamond surface and thermal oxidation of aluminum film in the air to form an alumina gate dielectric.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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