A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

Abstract

We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (Av) of 23.5 dB, a cutoff frequency (fc) of 500 kHz, a unit gain frequency (fug) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/μs, and a phase margin (PM) of 102° at a supply voltage of ±10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature.

Keywords

• a-IGZO TFTs%22%2C%22default_operator%22%3A%22AND%22%7D%7D%7D"> Coplanar <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs
• dual gate
• single gate
• operational amplifier (op-amp)