Effects of Al₂O₃ Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

Abstract

Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O2 post-annealing on the conduction characteristic of BP FETs. With the Al2O3 capping, it forms p-type into ambipolar transport and the electron mobility dramatically increases to 20-110 cm2/V·s in our case. Interestingly, with the O2 post-annealing, the transport can be tuned from ambipolar back to p-type as the annealing time extends. It is attributed that the Al2O3 capping introduces an n-type doping in BP channel while the O2 post-annealing dopes BP back into p-type. Moreover, after the O2 post-annealing the interfacial POx might be formed, resulting in the degradation of subthreshold swing and on/off current ratio.

Keywords

• Black phosphorus
• doping
• field-effect transistors
• ambipolar