Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Kuan-Ting Chen; Siang-Sheng Gu; Zheng-Ying Wang; Chun-Yu Liao; Yu-Chen Chou; Ruo-Chun Hong; Shih-Yao Chen; Hong-Yu Chen; Gao-Yu Siang; Chieh Lo; Pin-Guang Chen; M.-H. Liao; Kai-Shin Li; Shu-Tong Chang; Min-Hung Lee

doi:10.1109/JEDS.2018.2863283

IEEE Journal of the Electron Devices Society (Jan 2018)

Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Kuan-Ting Chen,
Siang-Sheng Gu,
Zheng-Ying Wang,
Chun-Yu Liao,
Yu-Chen Chou,
Ruo-Chun Hong,
Shih-Yao Chen,
Hong-Yu Chen,
Gao-Yu Siang,
Chieh Lo,
Pin-Guang Chen,
M.-H. Liao,
Kai-Shin Li,
Shu-Tong Chang,
Min-Hung Lee

Affiliations

Kuan-Ting Chen: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Siang-Sheng Gu: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Zheng-Ying Wang: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Chun-Yu Liao: ORCiD; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Yu-Chen Chou: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Ruo-Chun Hong: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Shih-Yao Chen: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Hong-Yu Chen: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Gao-Yu Siang: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Chieh Lo: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan
Pin-Guang Chen: National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, Taiwan
M.-H. Liao: ORCiD; Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan
Kai-Shin Li: National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, Taiwan
Shu-Tong Chang: Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan
Min-Hung Lee: ORCiD; Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan

DOI: https://doi.org/10.1109/JEDS.2018.2863283
Journal volume & issue: Vol. 6
pp. 900 – 904

Abstract

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Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<;60 mV/dec) is extended from ~2.5 (bulk-Si) decades to ~3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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