A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

Abstract

We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a large range of voltages, temperatures, and for a large range of device parameters. We also demonstrate good agreement with measured data. Furthermore, the development of this model outlines a methodology for transforming a tunneling equation into a compact form without numerical integration—this methodology can potentially be applied to other device structures.

Keywords

• Schottky barriers
• Schottky diodes
• semiconductor device modeling
• compact modeling
• semiconductor–metal interfaces
• silicon carbide