Charge pumping through a single donor atom

Abstract

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.

Keywords

• MOSFETs
• single atom transistors
• charge pumping
• electron sources
• electrons
• field effect transistors