A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

Jiayu Wu; Haimeng Huang; Bo Yi; Hao Hu; Huan Hu; Xing Bi Chen

doi:10.1109/JEDS.2019.2939223

IEEE Journal of the Electron Devices Society (Jan 2019)

A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

Jiayu Wu,
Haimeng Huang,
Bo Yi,
Hao Hu,
Huan Hu,
Xing Bi Chen

Affiliations

Jiayu Wu: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Haimeng Huang: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Bo Yi: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Hao Hu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Huan Hu: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Xing Bi Chen: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/JEDS.2019.2939223
Journal volume & issue: Vol. 7
pp. 1013 – 1017

Abstract

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A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (MN2) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing the LIGBT to be turned off rapidly without excessive tail current. In addition, MN2 enable the LIGBT to conduct the reverse conducting current like the freewheeling diode. In the forward-conducting state, MN2 is turned off, then the proposed LIGBT operates like a conventional one and the snap-back is avoided. The gate electrode of MN2 can be controlled synchronously by the gate signal of the LIGBT which is level-shifted by a p-i-n diode (D1) and processed by an anode-controlling circuit, and therefore, the proposed RC-LIGBT still maintains a three-terminal configuration. D1 and MN2 are embedded in the drift region and anode-side of the LIGBT, respectively, and they can be isolated by deep-oxide trenches. The numerical simulation results reveal that the turn-off loss ( ${E} _{\mathrm{ off}}$ ) and reverse recovery charge of the proposed LIGBT is reduced by 58.3% and 38.9%, respectively, compared with the conventional LIGBT combining with antiparallel freewheeling diode.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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