Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

Abstract

Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metal-organic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS <; -4.43 V, high off-state breakdown voltage of 378 V, high ION/IOFF ratio of 106, and low gate leakage current.

Keywords

• Zinc gallate
• metal-oxide-semiconductor field-effect transistors (MOSFETs)
• channel pinch-off