Spin-relaxation times exceeding seconds for color centers with strong spin–orbit coupling in SiC

Abstract

Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin–orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin–orbit coupling leads to a suppression of spin–lattice and spin–spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime T _1 of 2.4 s at 2 K.

Keywords

• semiconductor defects
• quantum information
• defect symmetries
• spin–lattice interaction