High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

Tao Sun; Kemeng Yang; Jie Wei; Yanjiang Jia; Siyu Deng; Zhijia Zhao; Bo Zhang; Xiaorong Luo

doi:10.1109/JEDS.2022.3208731

IEEE Journal of the Electron Devices Society (Jan 2022)

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

Tao Sun,
Kemeng Yang,
Jie Wei,
Yanjiang Jia,
Siyu Deng,
Zhijia Zhao,
Bo Zhang,
Xiaorong Luo

Affiliations

Tao Sun: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Kemeng Yang: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Jie Wei: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Yanjiang Jia: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Siyu Deng: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Zhijia Zhao: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Bo Zhang: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Xiaorong Luo: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/JEDS.2022.3208731
Journal volume & issue: Vol. 10
pp. 808 – 812

Abstract

Read online

A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV). Compared with the inherent reverse conduction capability of the conventional HEMT (Con. HEMT), the built-in SBD exhibits a low reverse turn-on voltage ( $V_{\text{RT}}$ ) and its $V_{\text{RT}}$ is independent of the threshold voltage and gate bias. At the off-state, the fixed positive and negative polarization charges form the polarization superjunction (PSJ). Therefore, the depletion region is extended and more uniform E-field distribution is obtained. Experimental results show that the RC-PSJ-HEMT achieves a low $V_{\text{RT}}$ of 0.68 V, which decreases 69.1% compared with that of the Con. HEMT. The BV of the RC-PSJ-HEMT (with $7.5 \mu \text{m}$ $V_{\text{GD}}$ ) is increased to 723 V from 202 V of the Con. HEMT.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

About the journal

Abstract

Keywords