Flexible HfO₂/Graphene Oxide Selector With Fast Switching and High Endurance

Abstract

Selector is considered as a promising solution to solve sneak-path current for high-density 3-Dimensional (3D) memories. However, bidirectional selector with fast speed and long lifetime is still extremely needed. In this work, 2D material of graphene oxide containing epoxide, hydroxyl and carboxyl (-COOH, -OH, >C=O) is assembled with HfO2 to form a flexible bi-layer selector. Interestingly, the selector exhibits excellent uniformity, fast switching speed (~160 ns) and remarkable endurance of ~5×108 cycles. Moreover, no performance degradation is observed for more than 103 times with the bending radii ranging from 40 mm to 20 mm. The high uniformity and excellent endurance may be attributed to the insulating interface layer at the HfO2/GO interface, which plays a vital role on the connection/disrupt of conductive filament (CF). Thus, the incorporation of GO into HfO2 selector may be a feasible way to achieve a promising HfO2-based selector, which have potential applications in high-density 3D integration for flexible electronics.

Keywords

• Selector
• graphene oxide
• bi-layer
• memristor