Magneto-transport and electronic structures of BaZnBi2

Abstract

We report the magneto-transport properties and electronic structures of BaZnBi _2 . BaZnBi _2 is a quasi-two-dimensional material with metallic behavior. Transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov–de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combined with the trivial Berry phase extracted from the SdH oscillation, BaZnBi _2 is suggested as a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi _2 .

Keywords

• linear magnetoresistance
• topological materials
• Shubnikov–de Haas oscillation