Steep Slope Field-Effect Transistors With B–Te-Based Ovonic Threshold Switch Device

Abstract

In this letter, a new ovonic threshold switch (OTS) device based on simple binary Boron-Tellurium (B-Te) film is developed and implemented in series with the source region of a transistor. The newly developed B-Te-based device shows excellent characteristics such as low operating voltage, low leakage current, abrupt turn-on/off slope, fast switching speed, high endurance, and high thermal stability. Due to the great properties of the B-Te OTS device, the implemented transistor exhibits subthreshold swing less than 10 mV/dec and high on/off current ratio greater than 105. Moreover, we present a direction of implementing an ideal transistor based on simulation results explaining the effect of off-state resistances and threshold voltages of the OTS devices on the IDS-VGS characteristics of the implementer transistor.

Keywords

• Threshold switching
• field-effect transistor
• steep slope
• subthreshold slope
• ovonic threshold switch