Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs

Abstract

In this paper, NBTI behaviors of Si pFinFETs are characterized with the measurement time down to ns-scale utilizing the fast Vth measurement (FVM) technique. It is found that the NBTI behaviors in terms of Vth shift is strongly influenced by the measurement speed even in the nano-second scale (ns-scale). The measurement phase itself during the NBTI characterization could bring in an additional Vth shift (ΔVth) or ΔVth recovery. From the ns-scale characterization results in different stress and temperature, it is shown that the rapid recoverable components of NBTI should be attributable to the rapid hole trapping/detrapping, which are related to the defects with time constants of ns-scale.

Keywords

• pFinFETs
• reliability
• NBTI
• ultra-fast measurement