IEEE Journal of the Electron Devices Society (Jan 2016)
Characterization of RF Noise in UTBB FD-SOI MOSFET
Abstract
In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations, we show that the noise figure changes with the substrate doping and buried oxide thickness.
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