Erratum to &#x201C;Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories&#x201D; [2021 774-777]

Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories” [2021 774-777]

Affiliations

Jun Gyu Lee: Department of Electronics and Computer Engineering, Hanyang University, Seoul, South Korea
Woo Je Jung: Department of Electronics and Computer Engineering, Hanyang University, Seoul, South Korea
Jae Hyeon Park: Department of Electronics and Computer Engineering, Hanyang University, Seoul, South Korea
Keon-Ho Yoo: ORCiD; Department of Physics, Research Institute for Basic Sciences, Kyung Hee University, Seoul, South Korea
Tae Whan Kim: ORCiD; Department of Electronics and Computer Engineering, Hanyang University, Seoul, South Korea

In [1], the following sentence on p. 774, second column, is revised as follows.

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494