SCR-Based ESD Protection Using a Penta-Well for 5 V Applications

Abstract

This paper proposes a new structure of silicon controlled rectifier (SCR)-based ESD protection circuit using a penta-well for ESD protection in 5 V applications. The proposed circuit exhibits higher holding voltage and current-driving capability than low Ron SCR (LRSCR) ESD protection circuits. The existing LRSCR ESD protection circuit and the proposed ESD protection circuit were fabricated using the 0.18 μm BCD process. The electrical and latch-up characteristics were compared and analyzed using transmission line pulse measurement and a transient-induced latch-up test.

Keywords

• Silicon controlled rectifier (SCR)
• penta-well
• holding voltage
• current driving capability