Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel

Abstract

Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control capability is applicable to punch-through stop of advanced CMOS devices and its benefits to 28 nm planar CMOS and 20 nm bulk FinFET devices projected by TCAD are discussed.

Keywords

• Oxygen-inserted silicon
• transient-enhanced diffusion
• CMOS
• FinFET