New Journal of Physics (Jan 2024)

Electronic, magnetic, and topological properties of ferromagnetic 2D perovskite-type oxides

  • Susaiammal Arokiasamy,
  • Gennevieve M Macam,
  • Sreeparvathy P C,
  • Rovi Angelo B Villaos,
  • Zhi-Quan Huang,
  • Chia-Hsiu Hsu,
  • Yoshinori Okada,
  • Hsin Lin,
  • Feng-Chuan Chuang

DOI
https://doi.org/10.1088/1367-2630/ad9be0
Journal volume & issue
Vol. 26, no. 12
p. 123031

Abstract

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Two-dimensional (2D) materials within the hematene-type binary oxides and perovskites family have recently gathered huge research interest for nanoelectronic devices. However, the exploration of their fascinating topological properties remains limited. Herein, through first-principles calculations, we systematically examine the electronic, magnetic, and topological properties of substitutionally doped 2D ABO _3 (A = As, Sb, or Bi, and B = V, Nb, or Ta) perovskite structures at the B site of a B _2 O _3 system. Interestingly, the atomic substitution makes the 2D ABO _3 structures dynamically stable. Our detailed calculations show the ferromagnetic (FM) and antiferromagnetic phases of these materials. The calculated Chern number ( C ) for the FM 2D ABO _3 (A = As, Sb, or Bi, B = Nb or Ta) suggests their topologically non-trivial phases. Furthermore, the computed nontrivial Berry curvature highlights the topological properties in AsNbO _3 . These findings highlight opportunities in 2D-ABO _3 materials, for applications in spintronics.

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