IEEE Journal of the Electron Devices Society (Jan 2025)

Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design

  • Zhidong Tang,
  • Zewei Wang,
  • Yumeng Yuan,
  • Chang He,
  • Xin Luo,
  • Ao Guo,
  • Renhe Chen,
  • Yongqi Hu,
  • Longfei Yang,
  • Chengwei Cao,
  • Lin Lin Liu,
  • Liujiang Yu,
  • Ganbing Shang,
  • Yongfeng Cao,
  • Shoumian Chen,
  • Yuhang Zhao,
  • Shaojian Hu,
  • Xufeng Kou

DOI
https://doi.org/10.1109/JEDS.2025.3542589
Journal volume & issue
Vol. 13
pp. 117 – 127

Abstract

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This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical analysis is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM and 5-bit flash ADC are designed, and their performance is investigated and optimized based on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design.

Keywords