Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Dong-Ru Hsieh; Kun-Cheng Lin; Tien-Sheng Chao

doi:10.1109/JEDS.2019.2896599

IEEE Journal of the Electron Devices Society (Jan 2019)

Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Dong-Ru Hsieh,
Kun-Cheng Lin,
Tien-Sheng Chao

Affiliations

Dong-Ru Hsieh: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
Kun-Cheng Lin: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
Tien-Sheng Chao: ORCiD; Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan

DOI: https://doi.org/10.1109/JEDS.2019.2896599
Journal volume & issue: Vol. 7
pp. 282 – 286

Abstract

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In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures (TN) from 700°C to 800°C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION), and enhancement of TEOS gate oxide breakdown E-field (EOBD). PG JAM TFTs by means of a proper channel doping concentration (Nch = 5 × 1018 cm-3) and a suitable TN (800°C) exhibit a steep A.S.S. ~96 mV/dec. and a large EOBD~12.1 MV/cm.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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