Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

Abstract

A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due to stronger interface coupling, as confirmed by TCAD simulations. A prototype device fabricated with a simplified process flow achieves a record photoresponsivity up to 3.3 x 104 A/W.

Keywords

• Interface coupling effect
• SOI/GeOI based photodetector
• high photoresponsivity
• imaging sensor arrays