CVD Growth Technologies of Layered MX<sub>2</sub> Materials for Real LSI Applications&#x2014;Position and Growth Direction Control and Gas Source Synthesis

T. Irisawa; N. Okada; W. Mizubayashi; T. Mori; W.-H. Chang; K. Koga; A. Ando; K. Endo; S. Sasaki; T. Endo; Y. Miyata

doi:10.1109/JEDS.2018.2870893

IEEE Journal of the Electron Devices Society (Jan 2018)

CVD Growth Technologies of Layered MX<sub>2</sub> Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis

T. Irisawa,
N. Okada,
W. Mizubayashi,
T. Mori,
W.-H. Chang,
K. Koga,
A. Ando,
K. Endo,
S. Sasaki,
T. Endo,
Y. Miyata

Affiliations

T. Irisawa: ORCiD; Nanoelectronics Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
N. Okada: Nanoelectronics Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
W. Mizubayashi: Nanoelectronics Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
T. Mori: ORCiD; Nanoelectronics Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
W.-H. Chang: ORCiD; Nanoelectronics Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
K. Koga: Nanomaterials Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
A. Ando: Nanoelectronics Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
K. Endo: Nanoelectronics Research Institute, National Institute of Advanced Science and Technology, Tsukuba, Japan
S. Sasaki: Department of Physics, Tokyo Metropolitan University, Tokyo, Japan
T. Endo: Department of Physics, Tokyo Metropolitan University, Tokyo, Japan
Y. Miyata: Department of Physics, Tokyo Metropolitan University, Tokyo, Japan

DOI: https://doi.org/10.1109/JEDS.2018.2870893
Journal volume & issue: Vol. 6
pp. 1159 – 1163

Abstract

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Position and growth direction control in chemical vapor deposition (CVD) of WS2 and SnS2 by using patterned Si/SiO2 substrates has been demonstrated. It was found that step edges effectively worked as crystal nuclei and lateral crystal growth from the edges with a certain level of growth directionality was observed. Gas source CVD using industrially friendly precursors (WF6, SnCl4, and H2S) has also been developed and WS2 and SnS2 synthesis with wafer-scale uniformity have been obtained.

Published in IEEE Journal of the Electron Devices Society

ISSN: 2168-6734 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494

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